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I will design professional rf power amplifier gan ldmos
Senior RnD Design Engineer
I am Musfira Hamza, an Electrical Engineer with over 10 years of practical experience delivering reliable engineering solutions.
I focus on understanding your requirements and providing quality work f...
About this Gig
ABOUT THIS GIG
Senior RF power amplifier engineer with 10+ years delivering high-performance PA solutions for defense contractors, SDR developers, telecom providers, and RF manufacturers worldwide.
Complete PA development from architecture through manufacturing documentation for military radios, SDR platforms, UAV systems, satellite terminals, and industrial RF systems.
Specializing in HF, VHF, UHF, L-band, S-band, C-band (up to 8 GHz), 0.1W to 100W. Expertise includes transistor selection, bias networks, load-pull optimization, matching networks, linearity enhancement, thermal management.
I work with GaN HEMT, LDMOS, GaAs, silicon devices across Class A/AB/B/C, D/E/F, and Doherty architectures.
Deliverables:
ADS/HFSS files, schematics, Gerber files, S-parameters, performance plots (Gain, PAE, IMD, ACPR), thermal analysis, BOM, documentation.
Applications:
SDR transmitters, tactical radios, UAV uplinks, satellite terminals, base stations, industrial RF.
Contact before ordering:
frequency band, output power, modulation, linearity/efficiency targets, constraints.
NDA available. Strict confidentiality.
Keywords:
RF power amplifier, PA design, GaN, LDMOS, Doherty, Keysight ADS
FAQ
Q1: What information do you need to start the PA design?
I need frequency band, output power, modulation type, linearity/efficiency targets, supply voltage, size constraints, and application environment. Contact me before ordering for a free technical consultation to ensure the design meets your exact requirements.
Q2: Do you provide physical prototypes or only design files?
I provide complete design files and manufacturing documentation. You can fabricate the PA using the schematics, BOM, and PCB guidelines I deliver. The Advanced package includes fabrication support and tuning guidance for prototype development.
Q3: Which transistor technologies do you work with?
I design with GaN HEMT (high power density, wide bandwidth), LDMOS (rugged, cost-effective for narrowband), GaAs pHEMT/HBT (low noise, high frequency), and silicon BJT/MOSFET (low cost, lower frequencies). I select devices based on frequency, power, efficiency, and cost requirements.
Q4: Can you design power amplifiers for military or defense applications?
Yes. I have extensive experience with military RF systems, tactical radios, ruggedized designs, and high-reliability applications. All defense projects are handled under strict confidentiality, and I can sign NDAs as required.
Q5: What amplifier classes do you specialize in?
I design Class A/AB for high linearity, Class B/C for efficiency, Class D/E/F for switch-mode high efficiency, and Doherty architectures for efficiency at power back-off. The choice depends on your modulation scheme, linearity requirements, and efficiency targets.
Q6: Can you optimize for both efficiency and linearity?
Yes. For modulated signals requiring linearity (OFDM, QAM), I use techniques like Class AB with envelope tracking, digital predistortion-compatible designs, or Doherty architectures that maintain high efficiency at back-off power levels while meeting ACPR and EVM specifications.
